SVD2N60T hangzhou?silan?microelectronics?co.,ltd rev:1.2?????????????2009.07.09 http://www.silan.com.cn ??????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????page?1?of?6 ordering?specifications part?no. package marking shipping SVD2N60T to-220-3l SVD2N60T 50unit/tube absolute?maximum?ratings ?(tc=25 c?unless?otherwise?noted) parameter symbol ????????????????????????value unit drain-source?voltage v ds 600 v gate-source?voltage v gs 30 v drain?current i d 2.0 a drain?current?pulsed i dm 8 a 44 w power?dissipation(t c =25 c) ???????????????????????????????-derate?above?25 c p d 0.22 w/ c single?pulsed?avalanche?energy??(note?1) e as 120 mj repetitive?avalanche?energy e ar 5.4 mj operation?junction?temperature t j -55 +150 c storage?temperature tstg -55 +150 c 2a,?600v?n-channel?mosfet general?description SVD2N60T?is?an?n-channel?enhancement?mode?power? mos field effect? transistor? which? is? produced? using? silan? proprietary? ? ? ? ? s- rin tm ?structure?dmos?technology.?the?improved?planar?stripe ?cell and? the? improved? guarding? ring? terminal? have ? been? especially tailored?to?minimize?on-state?resistance, ?provide?superior?switching performance,? and? withstand? high? energy? pulse? in? the? avalanche and?commutation?mode. these?devices?are?widely?used?in?ac-dc?power?suppliers,?dc-d c converters?and?h-bridge?pwm?motor?drivers. features * ? 2a,600v,r ds(on)(typ.) =4.0 w @v gs =10v * ? low?gate?charge * ? low?c rss * ? fast?switching * ? improved?dv/dt?capability 2 3 1 1. gate 2. drain 3. source to - 220 -3l 2 3 1 www.datasheet.co.kr datasheet pdf - http://www..net/
SVD2N60T hangzhou?silan?microelectronics?co.,ltd rev:1.2?????????????2009.07.09 http://www.silan.com.cn ??????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????page?2?of?6 thermal?characteristics parameter symbol value unit thermal?resistance,?junction-to-case r jc 2.87 c/w thermal?resistance,?junction-to-ambient r ja 100 c/w electrical?characteristics ?(tc=25 c?unless?otherwise?noted) parameter symbol test?conditions min. typ. max. unit drain?-source?breakdown?voltage b vdss v gs =0v,?i d =250a 600 -- -- v drain-source?leakage?current i dss v ds =600v,?v gs =0v -- -- 1.0 a gate-source?leakage?current i gss v gs =30v,?v ds =0v -- -- 100 na gate?threshold?voltage v gs(th) ?v gs =?v ds ,?i d =250a 2.0 -- 4.0 v static?drain-?source?on?state resistance r ds(on) ?v gs =10v,?i d =1.0a -- 4.0 4.6 w input?capacitance c iss -- 320 380 output?capacitance c oss -- 30 45 reverse?transfer?capacitance c rss v ds =25v,v gs =0v, f=1.0mhz -- 3 5.6 pf turn-on?delay?time t d(on) -- 13 30 turn-on?rise?time t r -- 12 60 turn-off?delay?time t d(off) -- 73 100 turn-off?fall?time t f v dd =300v,i d =2.0a, rg=25 w ???????????????????????(note?2,3) -- 14.3 70 ns total?gate?charge q g -- 9.3 13 gate-source?charge q gs -- 2.0 -- gate-drain?charge q gd v ds =480v,i d =2.0a, v gs =10v ???????????????????????(note?2,3) -- 3.3 -- nc source-drain?diode?ratings?and?characteristics parameter symbol test?conditions min. typ. max . unit continuous?source?current i s -- -- 2 pulsed?source?current i sm integral?reverse?p-n junction?diode?in?the mosfet -- -- 8.0 a diode?forward?voltage v sd i s =2.0a,v gs =0v -- -- 1.4 v reverse?recovery?time t rr -- 230 -- ns reverse?recovery?charge q rr i s =2.0a,v gs =0v, di f /dt=100a/s -- 1.0 -- c notes: 1.? l=56mh,?i as =2.0a,v dd =50v,r g =25 w ,starting?t j =25 c; 2. pulse?test:?pulse?width? ? 300 s,duty?cycle ? 2%; 3. essentially?independent?of?operating?temperature. www.datasheet.co.kr datasheet pdf - http://www..net/
SVD2N60T hangzhou?silan?microelectronics?co.,ltd rev:1.2?????????????2009.07.09 http://www.silan.com.cn ??????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????page?3?of?6 nomenclature ?typical?characteristics 1 vgs top?:???15 . 0 v 10 . 0 v 8. 0 v 7. 0 v 6. 5 v 6. 0 v 5. 5 v 5. 0 v botto m: 4. 5 v 4.5v 0. 01 0. 10 1. 00 10 . 00 100 . 00 0 2 4 6 8 10 150 25 - 55 0.0 2.0 4.0 6.0 8.0 10 .0 0.0 1.0 2.0 3.0 4.0 5.0 0.1 1.0 10 .0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 150 25 figure 1 .?on - region?characteristics ?figure 2 .?transfer?characteristics figure 3 .?on - resitance?variation?vs . ?drain?current?and?gate?voltage figure 4 .?body?diode?forward?voltage?variation?vs. source?current?and?temperature v ds ?drain - source?voltage [v] 1.0 0.1 10 note : 1 .??250 - s?pulse?test 2 . t c = 25 c v gs ?gate - source?voltage [v] i d ?drain?current [a] v gs = 10 v v gs = 20 v note :t j = 25 c v sd ?source - drain?voltage [v] note : 1.v gs =0v 2 .?250 s?pulse?test note : 1.v gs = 40 v 2 .?250 s?pulse?test www.datasheet.co.kr datasheet pdf - http://www..net/
SVD2N60T hangzhou?silan?microelectronics?co.,ltd rev:1.2?????????????2009.07.09 http://www.silan.com.cn ??????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????page?4?of?6 typical?characteristics?(continued) c a p a s i s t a n c e [ p f ] v g s g a t e - s o u r c e v o l t a g e [ v ] b v d s s ( n o r m a l i z e d ) d r a i n - s o u r c e b r e a k d o w n v o l t a g e r d s ( o n ) ( n o r m a l i z e d ) d r a i n - s o u r c e o n - r e s i s t a n c e www.datasheet.co.kr datasheet pdf - http://www..net/
SVD2N60T hangzhou?silan?microelectronics?co.,ltd rev:1.2?????????????2009.07.09 http://www.silan.com.cn ??????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????page?5?of?6 typical?test?circuit www.datasheet.co.kr datasheet pdf - http://www..net/
SVD2N60T hangzhou?silan?microelectronics?co.,ltd rev:1.2?????????????2009.07.09 http://www.silan.com.cn ??????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????page?6?of?6 package?outline to-220-3l(one) unit:?mm to-220-3l ? two ? unit:?mm 6 . 1 0 ~ 6 . 8 0 1 3 . 1 0 . 5 1 5 . 1 ~ 1 5 . 9 3 . 9 5 m a x www.datasheet.co.kr datasheet pdf - http://www..net/
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